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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

Categories Mosfet Power Transistor
Brand Name: IOR
Model Number: IRF3205PBF
Certification: ROHS
Place of Origin: CHINA
MOQ: 10pcs
Price: negotiate
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
Delivery Time: 2-3 working days
Packaging Details: 98PCS/Standard Package
FET Type: N-Channel
Drain to Source Voltage: 55V
Power Dissipation: 200W
Operating Temperature: -55°C ~ 175°C
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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs146nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3247pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C

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